Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM |
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| Authors: | Takayuki Nakano Tomonari Shioda Naomi Enomoto Eiji Abe Masakazu Sugiyama Yoshiaki Nakano Yukihiro Shimogaki |
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| Affiliation: | 1. Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;2. Department of Electronic Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;3. Solution Oriented Research for Science and Technology (SORST), Japan Science and Technology Corporation, Japan;4. Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;5. Research Center for Advanced Science and Technology, The University of Tokyo, 4–6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan |
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| Abstract: | Fabrication of abrupt InGaP on GaAs (InGaP/GaAs) and GaAs on InGaP (GaAs/InGaP) hetero-interfaces has been difficult using metal organic vapor phase epitaxy (MOVPE) due to the exchange of P and As during the fabrication steps. Indium (In) surface segregation during InGaP growth also degrades the abruptness. Here, the MOVPE gas-switching sequence to fabricate atomically abrupt hetero-interfaces was optimized and the effects of this optimization on the hetero-interface abruptness were quantitatively evaluated using the Z-contrast method with scanning transmission electron microscopy (STEM). Results revealed that (a) in the fabrication of InGaP/GaAs hetero-interface, the GaAs top layer should be stabilized using As-source gas supply, and the excess As layer on GaAs should be terminated using an additional supply of Ga species, and (b) in the fabrication of GaAs/InGaP interface, the InGaP layer should be grown using the flow modulation method to suppress In surface segregation. In conclusion, the abruptness of hetero-interfaces of InGaP/GaAs and GaAs/InGaP was improved by using these optimized gas-switching sequences. |
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