Observation of charge transfer process for optical emission of rare-earth dopant using electric probing technique |
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Authors: | M. Ishii S. Harako X. Zhao S. Komuro B. Hamilton |
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Affiliation: | 1. NIMS, National Institute for Materials Science, Surface Physics and Structure Unit (SPSU), Surface Physics Group, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;2. Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan;3. Faculty of Engineering, Toyo University, Kawagoe, Saitama 350-8585, Japan;4. The Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom |
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Abstract: | Charge propagation dynamics for the excitation and de-excitation of samarium doped titanium dioxide (TiO2:Sm) were observed by an electric measurement technique, namely, the phase response of complex impedance to step-function UV irradiation. The probing frequency for the impedance measurement was widely changed, and a critical frequency that emphasizes a specific charge propagation path was found. Above the critical frequency of 1 kHz the transitions from the photo-excited state to ground state progressed via a rapid, and a slow charge propagation path. Through a comparison of the frequency responses obtained under continuous UV light (photo-excited state) and in the dark (ground state), the rapid path was assigned to charge recombination in a defect-dopant complex in TiO2:Sm, which is consistent with the persistence of luminescence observed in conventional optical measurements. The slow path that is not associated with the optical transition was explained by a dissipation of excited charges. Similar path consistent with the charge dissipation explanation was confirmed below the critical frequency <1 kHz. |
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