Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy |
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| Authors: | Qixin Guo Hajime Akiyama Yuta Mikuriya Katsuhiko Saito Tooru Tanaka Mitsuhiro Nishio |
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| Institution: | Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan |
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| Abstract: | ZnTe layers were grown on (111) GaAs substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. X-ray diffraction analysis revealed that epitaxial ZnTe layers can be obtained on (111) GaAs substrates. X-ray rocking curves, Raman spectroscopy, and photoluminescence measurements showed that the crystal quality of ZnTe layers depends on the substrate temperature during the growth. A high-crystalline quality (111) ZnTe heteroepitaxial layer with strong near-band-edge emission at 550 nm was obtained at a substrate temperature of 440 °C. |
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