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MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate |
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| Authors: | Yasuhiro Isobe Hiromichi Ikki Tatsuyuki Sakakibara Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama Isamu Akasaki Takayuki Sugiyama Hiroshi Amano Mamoru Imade Yusuke Mori |
| Affiliation: | 1. Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;2. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;3. Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan;4. Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan |
| Abstract: | We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced by increasing the V/III ratio during growth. As a result, a high-resistivity GaN buffer layer for an AlGaN/GaN heterostructure field-effect transistor was realized. |
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