Direct observation of nucleation and early stages of growth of GaN nanowires |
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| Authors: | Rosa E. Diaz Renu Sharma Karalee Jarvis Qinglei Zhang Subhash Mahajan |
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| Affiliation: | 1. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287-6106, USA;2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Bldg. 735, Upton, NY 11973-5000, USA;3. Center for Nanoscale Science and Technology, National Institute of Standard Technologies, Gaithersburg, MD 20899-6203, USA;4. Advance Manufacturing Center, Cockrell School of Engineering, University of Texas at Austin, TX 78712-1018, USA;5. Ira A. Fulton School of Engineering, Arizona State University, Tempe, AZ 85287-9309, USA;6. Department of Chemical Engineering and Materials Science, University of California Davis, Davis, CA 95616-5294, USA |
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| Abstract: | We report direct observations of the nucleation and early stages of growth of GaN nanowires. The nanowires were formed by exposing Au+Ga droplets to ammonia. The formation process was observed in situ, and controlled in real time using an environmental transmission electron microscope. Observations show that nuclei forms only at thin region of the Au+Ga, following only the VLS mechanism. The droplet–nanowire interface in the initial stages is multi-faceted, and become planar during the growth. Chemical and structural analysis shows that the resulting nuclei are GaN with the wurtzite structure. |
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