| 大面积薄栅MOSFET的V_T与D_(OX)的关系研究 |
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| 引用本文： | 彭彩君,苏浩权,越泽庭.大面积薄栅MOSFET的V_T与D_(OX)的关系研究[J].华南理工大学学报(自然科学版),1988(1). |
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| 作者姓名： | 彭彩君 苏浩权 越泽庭 |
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| 作者单位： | 华南理工大学物理系，华南理工大学物理系，华南理工大学物理系 |
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| 摘 要： | 本文研究了大面积薄栅M OSFET的阈值电压与栅氧化层厚度的关系。实验结果表明,在薄栅情形(d_(ox)=135～312 )中,阈值电压随着栅氧化层厚度的减少而下降;阈值电压的一维模型仍然适用于大面积薄栅MOSFET。
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| 关 键 词： | MOS场效应晶体管 氧化物 薄膜生长 阈值电压 |
THE STUDY OF THE RELATIONSHIP BETWEEN V_T AND d_ox IN LARGE AREA THIN GATE MOSFET's |
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| Peng Caijun,Su Haoquan and Yue Zeting Dept.of Physics,South China Univ.of Tech..THE STUDY OF THE RELATIONSHIP BETWEEN V_T AND d_ox IN LARGE AREA THIN GATE MOSFET''''s[J].Journal of South China University of Technology(Natural Science Edition),1988(1). |
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| Authors: | Peng Caijun Su Haoquan and Yue Zeting Deptof Physics South China Univof Tech |
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| Abstract: | The relationship between the threshold voltages of large areathin gate oxide MOSFET's and the thickness of their gate oxide layersis investigated in this paper.The experimental results show that,inthe thin gate oxide case,the threshold voltage is reduced when theoxide thickness is decreased,and the one dimensional model of thethreshold voltage still suits the large area thin gate oxide MOSF-ET's. |
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| Keywords: | MOS field effect transistor oxide thin film growth threshold voltage |
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