Systematic investigation of the formation of 1D alpha-Si(3)N(4) nanostructures by using a thermal-decomposition/nitridation process |
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Authors: | Shen Guozhen Bando Yoshio Liu Baodan Tang Chengchun Huang Qing Golberg Dmitri |
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Institution: | Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. shen.guozhen@nims.go.jp |
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Abstract: | This article describes a simple thermal-decomposition/nitridation method for the large-scale synthesis of 1D alpha-Si(3)N(4) nanostructures, such as millimeter-scale microribbons, nanosaws, nanoribbons, and nanowires. These nanostructures are systematically investigated by checking the product deposited at different areas by using powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. Studies show that all these nanostructures have a single-crystalline nature and predominantely grow along the 011] direction. These 1D nanostructures are formed by thermal decomposition, followed by the nitridation of SiO. |
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Keywords: | crystal growth electron microscopy nanostructures nitrides silicon |
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