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Systematic investigation of the formation of 1D alpha-Si(3)N(4) nanostructures by using a thermal-decomposition/nitridation process
Authors:Shen Guozhen  Bando Yoshio  Liu Baodan  Tang Chengchun  Huang Qing  Golberg Dmitri
Institution:Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. shen.guozhen@nims.go.jp
Abstract:This article describes a simple thermal-decomposition/nitridation method for the large-scale synthesis of 1D alpha-Si(3)N(4) nanostructures, such as millimeter-scale microribbons, nanosaws, nanoribbons, and nanowires. These nanostructures are systematically investigated by checking the product deposited at different areas by using powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. Studies show that all these nanostructures have a single-crystalline nature and predominantely grow along the 011] direction. These 1D nanostructures are formed by thermal decomposition, followed by the nitridation of SiO.
Keywords:crystal growth  electron microscopy  nanostructures  nitrides  silicon
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