Untersuchungen zum Einfluß von Temperatur und Versetzungen auf die integralen Röntgenintensitäten von Si-Einkristallen |
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| Authors: | A. Krü ger,H. Stephanik |
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| Abstract: | It is possible to determine the Debye-temperature from measurements of the absolute integral X-ray intensities of silicon single crystals. Debye-temperatures of 543 to 533 K were found for a dislocation-free silicon crystal for temperatures between 90 and 296 K. The effect of dislocations on the Debye-temperature in silicon was investigated for various temperatures. |
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