| Abstract: | The influence of thermal conditions on the synthesis and crystallinity of ZnSiP2 is investigated. Extensive measurements lead to statements on the axial and radial distribution of temperature in the apparatus and in the reaction vessel. The axial temperature gradient in the crystallization room equals some 3 deg/cm, whereas in the ampoule a radial gradient of 4 to 5 deg/cm is ruling. — At different temperature differences the thermal conditions of deposition of ZnSiP2 are discussed, and it is found that ΔT should not fall below a minimum value of 15 deg, if ZnSiP2 is to be produced by means of gas phase transport in a finite period of time. — In a full discussion the characteristic transport effects are explained. — Condensation of ZnP2 at the end of the ampoule and by secondary transport caused by local temperature and concentration gradients in the crystallization room are stated to be responsible for different concentration profiles, for the phases present and for the crystallinity depending on the place of crystallization. — Hints for favourable variants of growing are given. |
