| Abstract: | Variations of the mean value of resistivity and its lateral distribution occurring in silicon after annealing near 450 °C are determined by the generation of donor active siliconoxygen complexes. The maximum value of additional donor concentration reached after annealing for more than 100 hours, goes with the 3. power of interstitial oxygen concentration. The experimental results are discussed in view of known models. Examples of the kinetics of thermal donor formation and annihilation are given at samples with inhomogeneously distributed oxygen content. A method with high lateral resolution in determining the distribution of oxygen is deduced and its sensitivity limits are estimated. |
