Zur Versetzungsdichtemessung von GaAs-Einkristallen mit dem automatischen Gefügeanalysator EPIQUANT

The influence of EPIQANT characteristics on measuring error of the etch pit density of GaAs >100< crystals is shown and the determination of the average size of etch pits from the chord length distribution is explained. Special linear analytic measurements in relation to the dislocation array on the crystal section and the size distribution of etch pits yield valuable references to the perfection of crystals.