Study of far-infrared reflection and Raman scattering spectra in reactive ion, etched ZnTe |
| |
| Authors: | Wu Sen Shen Wen-Zhong Ogawa Hiroshi Guo Qi-Xin |
| |
| Affiliation: | Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, China; Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan |
| |
| Abstract: | Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion, etched p-ZnTe samples. The averaged thickness of the surface damaged layer is found to be in the range of 1.0－1.5μm, and the, etch-induced defect density is in the order of 10^{18}cm^{-3}. The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency (rf) power. With the aid of related theories, we discuss the effects of the rf plasma power and the concentration of CH_4/H_2 on the damage, disorder, and the second-order Raman structures in p-ZnTe samples. |
| |
| Keywords: | reactive ion etched spectroscopic measurements ZnTe |
|
| 点击此处可从《中国物理》浏览原始摘要信息 |
|
点击此处可从《中国物理》下载免费的PDF全文 |
|
