Regular array of InGaAs quantum dots with 100-nm-periodicity formed on patterned GaAs substrates |
| |
Authors: | Y Nakamura N Ikeda S Ohkouchi Y Sugimoto H Nakamura K Asakawa |
| |
Institution: | The Femtosecond Technology Research Association, FESTA, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan |
| |
Abstract: | Regular arrays of InGaAs quantum dots (QDs) with a 100-nm-periodicity have been successfully fabricated by controlling the nucleation sites on artificially prepared nano-hole arrays. The nucleation probability of a single QD at each nano-hole reached 100% by depositing InGaAs at low temperature and subsequent annealing. Four InGaAs QD layers were vertically stacked while conserving the regularity, and the stacked QD array has shown a clear photoluminescence peak at room temperature. We discuss the effects of several growth conditions on the nucleation probability of QDs. |
| |
Keywords: | Author Keywords: Quantum dots Regular array Site-control InGaAs |
本文献已被 ScienceDirect 等数据库收录! |