Photoluminescence and growth mechanism of amorphous silica nanowires by vapor phase transport |
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| Authors: | Y Yang BK Tay XW Sun HM Fan ZX Shen |
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| Institution: | aSchool of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;bDepartment of Physics, National University of Singapore, Blk S12, 2 Science Drive 3, Singapore 117542, Singapore;cSchool of Physical and Mathematical Sciences, Nanyang Technological University, Block 5, 1 Nanyang Walk, Singapore 637616, Singapore |
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| Abstract: | Amorphous silica SiOx (1<x<2)] nanowires were fabricated on silicon substrate in an acidic environment by heating the mixture of ZnCl2, and VO2 powders at 1100 °C. The length of SiOx nanowires ranges from micrometers to centimeters, with uniform diameters of 10–500 nm depending on substrate temperature. Room-temperature photoluminescence spectra of the SiOx nanowires showed two strong luminescence peaks in the red and green region, respectively. The photoluminescence was suggested to originate from nonbridging oxygen hole center (red band), and hydrogen-related species in the structure of SiOx (green band). The study on chemical reactions and growth of the SiOx nanowires revealed the formation process of silica nanowires in acidic environment was closely related to the vapor–solid–liquid mechanism. |
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| Keywords: | Silica nanowires Photoluminescence Vapor phase transport |
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