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Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs |
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| Authors: | M. Gericke T. Lill M. Trapp C. -E. Richter A. Hupfer |
| Affiliation: | (1) SIMS-Labor im Werk für Fernsehelektronik GmbH, Ostendstrasse 1-14, O-1160 Berlin, Federal Republic of Germany |
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