| Storage of Photoexcited Electron—Hole Pairs in an AlAs／GaAs Heterostructure Created by Electron Transfer in Real and κ Spaces |
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| 引用本文： | 彭进,胡冰,等.Storage of Photoexcited Electron—Hole Pairs in an AlAs／GaAs Heterostructure Created by Electron Transfer in Real and κ Spaces[J].中国物理快报,2002,19(10):1540-1542. |
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| 作者姓名： | 彭进 胡冰 |
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| 作者单位： | [1]NationalLaboratoryforSuperlatticesandMicrostructures,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083 [2]NationalLaboratoryforSuperlatticesandMicrostructures,InstituteofSemicondu |
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| 摘 要： | The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transferring electrons in both real and κ spaces through resonant Γ-X in and AlAs/GaAs heterostructure,This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves.Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.
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| 关 键 词： | 半导体微结构 光激发电子－空穴对 AlAs／GaAs异结构 |
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