Optical properties of GaSe: Mn single crystals |
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| Affiliation: | 1. Institute of Physics named after academician G.M. Abdullayev''s of Azerbaijan National Academy of Sciences, G. Javidave 131, AZ1143, Baku, Azerbaijan;2. Centre for Energy Research, P.O.B. 49, H-1525, Budapest, Hungary;3. Wigner Research Centre for Physics, P.O.B. 49, H-1525, Budapest, Hungary;1. Department of Nanotechnology and Radiation Material Science, National Nuclear Research Center, 4 Inshaatchilar Pr., Baku, AZ 1073, Azerbaijan;2. Institute of Radiation Problems of Azerbaijan National Academy of Sciences, 9 B.Vahabzade Str., Baku, AZ 1143, Azerbaijan;3. Azerbaijan State University of Economics (UNEC), 6 Istiglaliyyat Str., Baku, AZ1001, Azerbaijan;1. College of Chemistry, Jilin University, Changchun 130012, People''s Republic of China;2. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, People''s Republic of China;1. Key Laboratory of Beijing City on Preparation and Processing of Novel Polymer Materials, Beijing University of Chemical Technology, 10029, People''s Republic of China;2. Beijing Engineering Research Center of Advanced Elastomers, Beijing University of Chemical Technology, 10029, People''s Republic of China;3. State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, 10029, People''s Republic of China;1. Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143, Azerbaijan;2. Baku Branch of M.V. Lomonosov Moscow State University, Baku AZ-1143, Azerbaijan;3. Institute of Research and Development, Duy Tan University, 550000 Da Nang, Vietnam;4. Bayerisches Geoinstitute, University Bayreuth, d-95440 Bayreuth, Germany;5. Institute of Physics of National Academy Sciences of Belarus, 220072 Minsk, Belarus |
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| Abstract: | To identify the manganese related defect levels in GaSe, GaSe:Mn single crystals were grown with various Mn dopant levels using the Bridgman technique and the photoconductivity and photoluminescence properties were investigated. Peaks introduced by the manganese related defects were observed at 1.916 and 1.724 eV in the photoconductivity spectra and at 1.804 eV in the photoluminescence spectra at 80 K. These results allow the calculation of the energies of the A1 and A2 centers at 0.348 and 0.156 eV, respectively, above the valence band and a donor level at 0.112 eV below the conduction band. Also, we find that the A1 and A2 centers are pinned within the conduction band from measurements of the temperature dependence of the photoconductivity spectra. |
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