Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon |
| |
| Affiliation: | 1. Key Laboratory of Orogenic Belts and Crustal Evolution, Ministry of Education, School of Earth and Space Sciences, Peking University, Beijing 100871, China;2. Laboratoire Géosciences Rennes, CNRS-UMR6118, Université Rennes 1, Observatoire des Sciences de l''Univers, Rennes 35042, France;3. Qinghai Oilfield Company, PetroChina, Dunhuang, Gansu 736202, China;1. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, Japan;2. Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu, Japan;3. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, Japan;4. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka, Japan |
| |
| Abstract: | The subsurface strain associated with surface reconstruction was measured for the Ge(001)-c(4×2) and Ge(111)-c(2×8) surfaces using high energy ion scattering. In the case of the Ge(001) surface we find the equivalent of ∼3 monolayers displaced by more than 0.12 Å, in accord with dimer models of the surface reconstruction. For the Ge(111) surface displacements are observed in off-normal incidence, indicating large displacements perpendicular to the surface or other reconstructions, such as a stacking fault configuration. The relationship between subsurface strain and stacking fault models is also discussed. The subsurface strain in these two Ge surfaces is remarkably similar to that of the corresponding Si surfaces, even though the details of the surface reconstruction are different. Measurements at low temperature indicate that the strain is essentially temperature independent, as expected. Measurements of the hydrogen covered surfaces show little change is strain, a surprising result when compared to the behavior of Si(001). |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
