Photoluminescence of heavily doped n-InP |
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| Affiliation: | 1. Department of Orthopaedics and Traumatology, Mersin University Faculty of Medicine, Mersin, Turkey;2. Department of Orthopaedics and Traumatology, Hand Surgery, Koç University Faculty of Medicine, Istanbul, Turkey;4. Orthopaedic Surgery, Hand Surgery, Private Practice at Hilal Mah, Rabindranath Tagore, Ankara, Turkey;3. Image Analysis Center, University College of London, London, United Kingdom;1. Centre of Research in Nanotechnology & Science, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398, Suzhou, PR China*Corresponding author.;2. Graduate University of Chinese Academy of Sciences, Beijing 100049, PR China;3. Advanced Material Laboratories, Sony Corporation, Atsugi Tec. 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan;4. Jiangsu Key Laboratory of ASIC Design, Nantong University, 226019, PR China;1. Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, 7 avenue Jean Capelle, 69621, Villeurbanne, France;2. Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134, Ecully, France;3. Laboratoire de Photonique et Nanostructure (LPN), CNRS, Université Paris-Saclay, Route de Nozay, F-91460, Marcoussis, France |
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| Abstract: | Photoluminescence and excitation spectra of weakly compensated n-type InP layers doped with tin in the density range from 3 × 1017 cm-3 to 2 × 1019 cm-3 are measured at T=2 K in order to get experimental informations about the influence of doping on important material parameters such as the band gap energy and the position of the quasi-Fermi level of electrons. The results derived from these investigations are compared with those obtained of relevant many-body theories to heavily doped semiconductors. Using RPA and Klauder's best (fifth) approximation the doping induced gap shrinkage of uncompensated n-InP is calculated. The comparison between theory and experiment yields the conclusion that for standard direct gap AIII-BV compounds such as InP and GaAs the compensation in principle expected has to be taken into the theoretical considerations. Moreover, we first present a “semianalytical” treatment of Klauder's multiple scattering approach which makes this theory easily applicable to other problems as for instance calculations of the luminescence line-shape of doped semiconductors. |
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