Pressure dependence of resistivity and magnetoresistivity in InSb below 1 K

It is shown that the hydrostatic pressure leads to the strong increase of InSb (n=2·10¹⁴ cm^-3) crystal resistivity below 100 mK. Increase of the electron effective mass due to applied pressure does not influence the behavior of magnetoresistivity for temperatures higher than 100 mK whereas it causes a strong increase in positive magnetoresistivity at T < 100 mK. The observed decrease in the hopping conductivity reflects the pressure and magnetic field induced reduction of the electron localization length.