Mott transition for picosecond all-optical nor gate in CdSe |
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| Affiliation: | 1. Jiangsu Key Laboratory of Spectral Imaging and Intelligent Sense, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China;2. Institute of Spacecraft System Engineering, China Academy of Space Technology, Beijing 100094, China;3. Nanjing Changfeng Aerospace Electronic Technology Co., Ltd, Nanjing, Jiangsu, 211800, China;1. Department of Physics, The Institute of Science, Madam Cama Road, Mumbai 400032, M. S., India;2. Department of Physics, Savitribai Phule Pune University, Pune 410007, M. S., India;1. College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming 650500, China;2. Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming 650500, China |
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| Abstract: | Using picosecond time resolved spectroscopy, we study the extinction kinetics of the optical transmission of CdSe platelets induced by strong optical pumping. We investigate particularly the all-optical gate capabilities (resulting from the bandgap shrinkage due to the Mott transition) for laser beams the wavelength of which ranges from 676 to 678 nm. The electron-hole plasma density necessary to enable the optical switching is determined (ϱ ∼ 2 × 1017cm−3 at 20K). The switch-off time (i.e. the transparency recovery time) is also studied at different wavelengths by picosecond spectroscopy. |
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