Higher excited states of acceptors in cubic semiconductors |
| |
| Affiliation: | 1. Department of Chemistry, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea;2. Future Convergence Engineering, School of Energy, Materials, and Chemical Engineering, Korea University of Technology and Education (KOREATECH), Cheonan 31253, Republic of Korea;3. Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea;1. National Institute of Advanced Industrial Science and Technology (AIST), 2266-98, Anagahora, Shimo-shidami, Moriyama, Nagoya 463-8560, Japan;2. Department of Chemical and Biological Engineering, University of Sheffield, Sheffield, UK;1. Laboratory (L.A.N.O), Department of Mathematics, Faculty of Science, Mohammed I University, Oujda 60000, Morocco;2. Department of Mathematics (CRMEFO), and Laboratory (L.A.N.O), Faculty of Science, Mohammed I University, Oujda 60000, Morocco |
| |
| Abstract: | For the first time, higher excited states of shallow acceptors up to the 3s and 4s states are calculated based on the Balderschi and Lipari theory including the cubic correction. The eigenvalues and eigenvectors of the effective mass Hamiltonian for shallow acceptor states were obtained by the finite element method. The resultant sparse matrix is diagonalized by a newly developed Saad's method based on Arnoldi's algorithm. Comparison with experimental spectra on ZnTe:Li and ZnTe:P gives best valence band parameters for ZnTe; μ = 0.60 and δ = 0.12. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
