Phase shift analysis of below-gap primary photocurrent in hydrogenated amorphous silicon |
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| Affiliation: | 1. Department of Rheumatology, Zhongshan Hospital, Fudan University, Shanghai, 200032, China;2. Evidence-Based Medicine Center, Fudan University, China;3. Key Laboratory of Glycoconjugate Research Ministry of Public Health, Gene Research Center, Department of Biochemistry and Molecular Biology, School of Basic Medical Sciences, Fudan University, Shanghai, China;1. Museum of Comparative Zoology and Department of Organismic and Evolutionary Biology, Harvard University, Cambridge, MA 02138, USA;2. Centre for Biodiversity and Conservation Biology, Royal Ontario Museum, 100 Queen’s Park, Toronto, Ontario M5S 2C6, Canada;1. School of Science, Chang’an University, Xi’an 710064, PR China;2. Department of Applied Mathematics, Northwestern Polytechnical University, Xi’an 710129, PR China;1. Interstitial Lung Disease Program, National Jewish Health, Denver, CO;2. Division of Pulmonary and Critical Care Medicine, Department of Medicine, Mayo Clinic, Rochester, MN;3. Advanced Lung Disease and Lung Transplant Program, Inova Fairfax Hospital, Falls Church, VA;4. Division of Pulmonology, Department of Medicine, Tygerberg Academic Hospital, Stellenbosch University, Stellenbosch University, Cape Town, Western Cape, South Africa;5. Department of Radiology, Tygerberg Academic Hospital, Stellenbosch University, Stellenbosch University, Cape Town, Western Cape, South Africa;6. Division of Nuclear Medicine, Department of Radiology, Mayo Clinic, Rochester, MN;7. Department of Immunology, Mayo Clinic, Rochester, MN;1. Servicio de Anestesiología, Reanimación y Terapéutica del Dolor, Consorcio Hospital General Universitario de Valencia, Valencia, Spain;2. Servicio de Anestesiología, Reanimación y Terapéutica del Dolor, Hospital de Tortosa Verge de la Cinta, Tarragona, Spain |
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| Abstract: | Below-gap primary photocurrent associated with dangling bond defects in hydrogenated amorphous silicon has been investigated by measuring the amplitude and phase shift spectra with respect to the chopped excitation light. Theoretical analysis has been made on the temperature and chopping frequency dependence of the phase shift, yielding a conclusion that the doubly occupied dangling bond states are located at 0.5-0.6 eV below the conduction band edge. |
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