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Cross-section for impact ionisation in semiconductors
Affiliation:1. Institute for Technical Chemistry and Environmental Chemistry, Friedrich-Schiller University Jena, Lessingstr. 12, D-07743 Jena, Germany;2. Otto-Schott-Institute of Materials Research, Friedrich-Schiller University Jena, Fraunhoferstr. 6, D-07743 Jena, Germany;1. Structural Biology Lab, Centre for Bio Medical Research, School of Bio Sciences and Technology, VIT University, Vellore, Tamil Nadu 632 014, India;2. Department of Biochemistry and Biotechnology, Faculty of Science, Annamalai University, Chidambaram, Tamil Nadu 608 002, India;1. Instituto de Química, Universidade Federal de Uberlândia, Av. João Naves de Ávila, 2121 Uberlândia, MG, Brazil;2. Departamento de Química e Farmácia, Universidade Federal dos Vales do Jequitinhonha e Mucuri, Rod MGT 367 - Km 583, Diamantina, MG, Brazil
Abstract:The dependence of the impact ionisation cross-section upon the carrier energy in a semiconductor is obtained by a numerical method. The result is used to calculate the field dependent concentration of the nonequilibrium carriers. The agreement of the results with the experimental data is found to improve in comparison to other simplified calculations.
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