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New phases in the phase transition in amorphous InSb films

Institution:	1. Department of Engineering and Materials Physics, ICT-IOC, Bhubaneswar, 751013, India;2. Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India;3. Department of Physics, Indian Institute of Science, Bengaluru, 560012, India;1. Department of Engineering and Materials Physics, Institute of Chemical Technology-Indian Oil Odisha Campus, Bhubaneswar 751013, India;2. Department of Physics, Indian Institute of Science, Bangalore 560012, India;3. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India

Abstract:	In this paper the structures in the process of the phase transition in amorphous InSb film condensed at low temperature are studied by X-ray diffraction experiments. The highest T_c = 4.18 K is as a result of hexagonal phase. The results of the conductance and the critical temperature are explained by means of the experiments of X-ray diffraction in the process of phase transition.

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