Dielectric properties of CsBr single crystals-effect of d.c. bias |
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| Affiliation: | 1. Basic Sciences Department, Deanship of Preparatory Year, University of Ha’il, Hail, Saudi Arabia;2. Department of Physics, College of Science, University of Jeddah, Jeddah, Saudi Arabia;3. Department of Chemistry, College of Sciences, Qassim University, Qassim, Buraidah 51452, Saudi Arabia;4. Department of Chemistry, Faculty of Sciences, Ibb University, Ibb, Yemen;5. Physics Department, Faculty of Science, Ibb University, Yemen;1. Department of Smart City, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea;2. Department of Energy Systems Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea;3. Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea;4. Institute of Engineering Research, Research Institute of Advanced Materials, Soft Foundry, School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea;5. Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Republic of Korea;6. Department of Chemistry, Research Institute for Convergence of Basic Science, and Research Institute for Natural Science, Hanyang University, Seoul 04763, Republic of Korea;1. School of Materials Science and Engineering, Ocean University of China, 238 Songling Road, Qingdao 266100, PR China;2. College of Information Science and Technology, Jinan University, 601 Huangpu Avenue West, Guangzhou 510632, PR China;3. State Centre for International Cooperation on Designer Low-Carbon and Environmental Material (SCICDLCEM), School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China;1. Energy Materials & Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Jeonbuk National University, Jeonju, 54896, Republic of Korea;2. New& Renewable Energy Material Development Center (NewREC), Jeonbuk National University, Jeonbuk, Republic of Korea;3. Korea Basic Science Institute (KBSI), 169-148 Gwahak-ro, Yuseong-gu, Daejon, 34133, Republic of Korea;4. Advanced Materials and Devices Laboratory, Department of Bio-Convergence Science, Jeonbuk National University, Jeongeup Campus, 56212, Republic of Korea;5. Group for Molecular Engineering of Functional Materials (GMF), Institute of Chemical Science and Engineering, Faculty of Basic Science, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland;1. Photonics & Nanotechnology Section, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre Facility, Visakhapatnam 531011, India;2. Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India |
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| Abstract: | ![]()
The dielectric properties of CsBr single crystals, both virgin and γ-irrddiated have been measured as a function of frequency (103–105Hz), temperature (300–575 K) and d.c. bias (0–350 V cm−1). γ-irradiation produces colour centres in these crystals and consequently an increase in space charge density is observed. D.c. bias has brought in considerable changes in dielectric constant (ϵ') and loss (tanδ) of these crystals particularly at low frequencies and high temperatures. An attempt has been made to understand these data qualitatively through barrier layer formation. |
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