The formation of arsenic antisite defects during plastic deformation of GaAs |
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| Affiliation: | 1. Department of Materials Science, Graduate School of Engineering Science, Akita University, 1-1 Tegatagakuen-machi, Akita 010-8502, Japan;2. Akita Industrial Technology Center, 4-11 Sanuki, Araya-machi, Akita 010-1623, Japan;3. Yamagata Research Institute of Technology, 2-2-1 Matsuei, Yamagata 990-2473, Japan |
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| Abstract: | The electron paramagnetic resonance (EPR) signal of arsenic antisite defects increases after plastic deformation of GaAs. This has been attributed in the preceeding paper to the formation of only compensating acceptors rather than additional antisites. A critical discussion of this alternative model is presented, taking into account new experimental results. |
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