Photon energy dependence of SW effect in a-Si:H films |
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| Affiliation: | 1. Provincial Key Laboratory of Solid State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, Zhejiang Province, PR China;2. Ningbo Materials Institute of Technology and Engineering, CAS, No.1219 Zhongguan West Road, Zhenhai District, Ningbo City 315201, Zhejiang Province, PR China;3. School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, Yunnan Province, PR China;4. Zhejiang Energy Group R&D, Hangzhou 310003, Zhejiang Province, PR China;1. School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;2. Research and Development Center, Dubai Electricity and Water Authority, Dubai, United Arab Emirates;3. Department of Chemistry, Dayanand Anglo-Vedic (PG) College Kanpur, Chhatrapti Shahu Ji Maharaj University, Kanpur 208001, India;4. SSN Research Centre, SSN Nagar, Kalavakkam 603110, TN, India |
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| Abstract: | In order to explore the creation process of Staebler-Wronski (SW) defect in a-Si: H films. We investigated the effect of monochromatic light exposure with different photon energies: 2.54, 1.96, 1.17 and 0.95 eV. The experimental results show that threshold energy for SW defect creation is around 1.17 eV. |
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