The segregation of carbon to the (110) surface of a Fe-10at% Si single crystal |
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| Affiliation: | 1. State Key Laboratory of High Performance and Complex Manufacturing, Central South University, Changsha 410083, China;2. Zhejiang Provincial Key Laboratory of Part Rolling Technology, Ningbo University, Ningbo 315211, China;1. Faculty of Science and Engineering, Iwate University, Iwate, Japan;2. Institute of Fluid Science, Tohoku University, Miyagi, Japan;3. Iwate Agricultural Research Center, Iwate, Japan;1. Belgorod State University, 308015 Belgorod, Russia;2. Max-Planck-Institut fur Eisenforschung GmbH, 40237 Dusseldorf, Germany;3. Institut fur Werkstoffe, Ruhr-Universitat Bochum, 44801 Bochum, Germany |
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| Abstract: | The kinetics of the surface segregation of carbon to the (110) surface of a Fe-10at%Si single crystal was studied in the temperature range 350–430°C by Auger electron spectroscopy. The results could not be explained by diffusion models. However, it was found that the rate determining process was graphite island growth on the surface of the crystal to attain a maximum coverage of 40%. The activation energy for the process is (230±20) kJ/mol and the hexagonal constant for the graphite overlayer is 0.245±0.002 nm. These results are in contrast with segregation results obtained for a Fe-6at%Si single crystal where bulk diffusion was the rate limiting process and a maximum carbon coverage of 12% was observed. |
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