Raman scattering in ferromagnetic semiconductors under crossed fields |
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| Institution: | 1. UGC-DAE Consortium for Scientific Research, III/LB-8, Bidhannagar, Kolkata 700098, India;2. Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan;3. Department of Physics, Jadavpur University, Kolkata 700032, India |
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| Abstract: | The influence of crossed electric and magnetic fields on the intraband resonant contribution to Raman scattering is discussed. It is shown that in the presence of these fields, the Raman efficiency for one magnon process in ferromagnetic semiconductors exhibits two resonant peaks which are dependent on the ratio βE/Hβ. |
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