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A shortcut to band renormalization in semiconductors with a finite temperature plasma
Affiliation:1. Department of Cogno-Mechatronics Engineering, Pusan National University, Busan, 46241, Republic of Korea;2. Department of Electrical Engineering, Convergence IT Engineering, and Mechanical Engineering, Medical Device Innovation Center, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea;3. Safety Measurement Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea;4. Department of Bio-Convergence Engineering, Korea University, Seoul, 02841, Republic of Korea;5. Department of Medical Physics, University of Science and Technology, Daejeon, 34113, Republic of Korea;6. Interdisciplinary Program in Precision Public Health, Korea University, Seoul, 02481, Republic of Korea;1. Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany;2. School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom;3. Ioffe Institute, 194021 St. Petersburg, Russia;4. Technische Physik, Universität Würzburg, 97074 Würzburg, Germany;5. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
Abstract:It is shown that the band renormalization in semiconductors containing a plasma can be calculated by combining Lindhard's screening theory with electrostatic energy considerations in a two-test-charge model. The calculations for finite temperatures involve two numerical integrations in reciprocal space. The excitonic ground state below the Mott density is also calculated. The results agree well with experiments on GaAs and with calculations based on more elaborate microscopic theories.
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