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Surface segregation in liquid Ga-In alloys studied by bombardment-induced photon emission
Institution:1. Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China;2. Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China;3. Department of Materials Science and Engineering, National United University, Miaoli, 36063, Taiwan;4. Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, 54561, Taiwan;5. Department of Biomedical Engineering, Da-Yeh University, Changhua 51591, Taiwan
Abstract:The surface composition in liquid Ga-In alloys bombarded by Ar+ ions is mostly determined by thermal segregation effects. Photon emission from sputtered atoms was successfully used to study the surface segregation. The coordination numbers characterizing the surface layer of liquid Ga-In alloys were found.
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