Identification of the phosphor vacancy defect in electron irradiated p-type Inp |
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| Institution: | 1. School of Chemistry and Chemical Engineering, College of Rare Earths, Jiangxi University of Science and Technology, Ganzhou, Jiangxi, 341000, China;2. National Rare Earth Functional Material Innovation Center, Ganzhou, Jiangxi, 341000, China;3. Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, 361021, China;1. Department of Physics, Cotton University, Guwahati, 781001, India;2. Department of Physics and Electronics, Rhodes University, P O Box 94, Grahamstown, 6140, South Africa |
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| Abstract: | A new EPR spectrum has been observed in electron irradiated p-type InP. The spectrum is isotropic, has an effective g-factor of 2.05 + 0.04 and a peak to peak linewidth of 1800 G. Its introduction rate R = 1 cm−1 . We attribute this spectrum to the neutral phosphor vacancy V0P. |
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