On the d.c. conductivity in semi-insulating GaAs |
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| Affiliation: | 1. College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China;2. Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044, China;3. School of Mathematics & Physics, Henan University of Urban Construction, Pingdingshan 467036, China;1. Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea;2. Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom;3. Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea;4. Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea;5. Department of Physics, Incheon National University, Incheon, 22012, Republic of Korea;6. Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju, 28644, Republic of Korea;1. Department of Electrical Engineering, Ferdowsi University of Mashhad, 9177948974, Mashhad, Iran;2. Organic Nano-Electronic and Organic Solar Cell Lab, Ferdowsi University of Mashhad, 9177948974, Mashhad, Iran;3. Dept. of Micro- and Nanoel. Syst., Ilmenau University of Technology, 98684, Ilmenau, Germany;1. Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia;2. Research Center for Advanced Measurement and Characterization, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan |
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| Abstract: | We investigate the temperature dependence of electrical conductivity of SI-GaAs. We have shown that the surface conductivity obeys the Berthelot type of dependence, the bulk component, on the other hand, fulfills the Arrhenius dependence. |
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