Motional narrowing of H NMR in annealed a-Si:H prepared by glow discharge |
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| Affiliation: | 1. Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi''an Jiaotong University, Xi''an 710049, China;2. Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060, China |
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| Abstract: | NMR measurements were made at 77 K and 4.2 K for hydrogenated amorphous Si films prepared by glow discharge decomposition on room temperature substrate and annealed up to 500°C. It is found that the narrow component line in the NMR signal observed at 77 K or above for films annealed above 400 °C is motionally narrowed one. |
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