Surface states on GaAs(110) |
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| Affiliation: | 1. Materials Science Program, Colorado School of Mines, Golden, CO 80401, USA;2. Department of Physics, University of Oregon, Eugene, OR 97403, USA;3. Department of Chemistry, University of Oregon, Eugene, OR 97403, USA;1. Computational Nanomaterial Research Lab, Department of Applied Physics, Shri Shankaracharya Technical Campus, Bhilai, Chhattisgarh, India;2. Department of Electronics & Telecommunication, Shri Shankaracharya Technical Campus, Bhilai, Chhattisgarh, India;1. School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, China;2. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, 210096, China;3. Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, 230026, China |
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| Abstract: | The electronic structure of the (110) surface of GaAs is recalculated using the relaxation geometry recently obtained from analyzing elastic low-energy electron diffraction intensity data and a self-consistent ab initio pseudopotential approach. Better agreement is found for the occupied surface states compared with photoemission data, giving support for the new structural model. The influence of convergence of the plane-wave expansion and relativistic effects on the surface states is also examined. |
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