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The optically detected magnetic resonance of dangling bonds at the Si/SiO2 interface
Institution:1. State Key Laboratory of Separation Membranes and Membrane Processes, School of Textile Science and Engineering, Tiangong University, Tianjin, PR China;2. School of Chemical Engineering and Technology, Tianjin University, Tianjin, PR China;3. School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, PR China;4. China Offshore Environmental Service Ltd., Tianjin, PR China;1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China;2. University of Chinese Academy of Sciences, Beijing, 100049, China;3. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China;1. Research Scholar, Department of Electronics and Communication Engineering, Jawaharlal Nehru Technological University College of Engineering, Jagtial, Telangana, India;2. Associate Professor, Department of Electronics and Communication Engineering, Jawaharlal Nehru Technological University College of Engineering, Jagtial, Telangana, India
Abstract:The optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62; direction. The negative sign observed for both the Pb center and the neutral phosphorus donor resonances allows us to interpret the recombination mechanism as a spin dependent electron transfer from the phosphorus donor to the Pb center.
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