Quantized Hall effect in gated AlGaAs/GaAs heterostructures: Localization as a function of number density and magnetic field |
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| Institution: | 1. Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48105, USA;2. Qualcomm MEMS Technologies, Inc., San Jose, CA 95134, USA;1. Department of E & C Engg, National Institute of Technology Karnataka, Surathkal Mangaluru, 575025, India;2. Department of Electronics and Communication Engineering, Vignan''s Foundation for Science, Technology and Research, Guntur, 522213, India;3. Department of Nanoscience and Engineering, Centre of Nano Manufacturing, Inje University, 197 Inje-ro, Gimhae, Gyeongnam-do, 50834, South Korea;1. NeuDrive Limited, Biohub, Alderley Park, Macclesfield SK10 4TG, United Kingdom;2. Research Center for Organic Electronics, Yamagata University, Jonan, Yonezawa, Yamagata 992-8510, Japan;4. Eurecat Technology Centre of Catalonia, Avenida Ernest Lluch 36, Mataro, Barcelona, Spain;5. Institute of Microelectronics of Barcelona IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain |
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| Abstract: | We report two-terminal magnetoresistance measurements on a short gated GaAsAlGaAs HEMT (High Electrical Mobility Transistor) sample for magnetic fields to 18.5 Telsa and temperatures near 0.5 K. A gated sample was used, permitting variation of the 2D charge density over a wide range. Additional measurements were made on gated Van Der Pauw squares that are consistent with the short gate FET results. Using the localization model, the experimental data shows that in the Quantum Hall Effect (QHE) region, the fraction of localization within a Landau level remains unchanged at different magnetic fields and is also unchanged over a wide range of 2D electron number density (Ns). This is in contrast with the observed large dependence of mobility on Ns at the same temperatures in the same sample. |
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