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Observation of superheating during picosecond laser melting
Affiliation:1. Mathematics and Physics Institute, Fujian University of Technology, Fuzhou, 350118, China;2. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China;1. Physics Department, University of Pretoria, Pretoria, South Africa;2. Laboratory for Microscopy and Microanalysis, University of Pretoria, South Africa;3. School of Physics, University of the Witwatersrand, Johannesburg, South Africa;4. Institut Für Festköperphysik, Friedrich-Schiller-Universität Jena, Jena, Germany;1. Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China;2. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China;4. University of Chinese Academy of Sciences, Beijing 100049, China;5. Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China;1. Department of Physics, Indian Institute of Technology, Kharagpur 721302, India;2. Inter-university Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067, India
Abstract:The surface temperature of GaAs during pulsed laser heating is obtained from the measured velocity distributions of evaporated atoms. For nanosecond pulses the observed solid-liquid transition temperature agrees with the equilibrium melting point. It is shown that with picosecond pulses the solid is superheated by several hundred degrees.
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