Ab initio investigation of boron nanodevices: conductances of the different geometric conformations |
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Authors: | Li Gui-Qin |
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Institution: | Department of Physics, Tsinghua University, Beijing 100084, China |
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Abstract: | Conductances of different geometric conformations of boron
ribbon devices are calculated by the \textit{ab} \textit{initio} method.
The $I$--$V$ characteristics of three devices are rather different due
to the difference in structure. The current of the hexagonal boron
device is the largest and increases nonlinearly. The current of the
hybrid hexagon-triangle boron device displays a large low-bias
current and saturates at a value of about 5.2~$\mu $A. The current
of the flat triangular boron flake exhibits a voltage gap at low bias
and rises sharply with increasing voltage. The flat triangular boron
device can be either conducting or insulating, depending on the
field. |
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Keywords: | boron conductance different geometry conformation |
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