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新型无铟透明导电-电致变色双功能MoO_3/Ag/MoO_3薄膜的制备及性能研究
引用本文:刘岩,吕营,何龙桂,刘星元.新型无铟透明导电-电致变色双功能MoO_3/Ag/MoO_3薄膜的制备及性能研究[J].发光学报,2016,37(2):187-191.
作者姓名:刘岩  吕营  何龙桂  刘星元
作者单位:1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033; 2. 中国科学院大学, 北京 100049; 3. 福建省捷创电子科技有限公司, 福建 福清 350301
基金项目:国家自然科学基金(6140031454)
摘    要:研制了集电致变色和透明导电功能为一体的MoO_3/Ag/MoO_3(MAM)双功能薄膜。MAM薄膜采用电子束热蒸发技术在室温下制备。作为透明电极,MAM薄膜显示出良好的光电性能,可见光平均透过率为59.4%,方块电阻为12.2Ω/□。作为电致变色材料,MAM薄膜具有较快的响应时间(着色时间4.3 s,褪色时间11.1s),25%的光学对比度(528 nm),良好的稳定性(100次循环),以及较高的着色效率(40.5 cm~2·C~(-1)),在已报道的MoO_3着色效率中处于较高的水平。

关 键 词:电致变色  MoO3  介质/金属/介质  稳定性
收稿时间:2015-10-16

Preparation and Properties of New Type of Transparent Conductive and Electrochromic Bi-functional Indium-free MoO3/Ag/MoO3 Thin Films
LIU Yan,LYU Ying,HE Long-gui,LIU Xing-yuan.Preparation and Properties of New Type of Transparent Conductive and Electrochromic Bi-functional Indium-free MoO3/Ag/MoO3 Thin Films[J].Chinese Journal of Luminescence,2016,37(2):187-191.
Authors:LIU Yan  LYU Ying  HE Long-gui  LIU Xing-yuan
Institution:1. State Key Laboratory of Luminescence and Applications, Changchun Insitute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China; 3. Fujian Jiechuang Electronic Technology Co., LTD., Fuqing 350301, China
Abstract:MoO3/Ag/MoO3 (MAM) films were utilized for constructing bi-function electrochromic devices, which served as both transparent electrodes and electrochromic materials. MAM films were prepared by E-beam evaporation at room temperature. As a transparent electrode, MAM film has a good photoelectric performance with an average transmittance of 59.4% and a sheet resistance of 12.2 Ω/ □. As an electrochromic material, MAM film shows a fast response time (coloration time 4.3 s, bleaching time 11.1 s), a larger optical contrast of 25% at 528 nm, a good stability (100 cycles) and a higher coloration efficiency of 40.5 cm2·C-1, which is at a high level among the reported data.
Keywords:electrochromism  MoO3  dielectric-metal-dielectric  stability
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