| 多层Ti/Al电极结构对Ga N/AlGaN HEMT欧姆接触特性的影响 |
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| 引用本文： | 于宁,王红航,刘飞飞,杜志娟,王岳华,宋会会,朱彦旭,孙捷. 多层Ti/Al电极结构对Ga N/AlGaN HEMT欧姆接触特性的影响[J]. 发光学报, 2016, 37(2): 219-223. DOI: 10.3788/fgxb20163702.0219 |
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| 作者姓名： | 于宁 王红航 刘飞飞 杜志娟 王岳华 宋会会 朱彦旭 孙捷 |
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| 作者单位： | 1. 北京工业大学电控学院 光电子技术实验室, 北京 100124;2. 电子科技大学中山学院 电子薄膜与集成器件国家重点实验室中山分实验室, 广东 中山 528402 |
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| 基金项目： | 北京市15青年拔尖项目(311000543115501)，中山市科技计划(2014A2FC305)，国家自然科学基金(61204011)，科研基地建设(PXM2015_014204_500008) |
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| 摘 要： | 研究了多层Ti/Al结构电极对GaN/AlGaN HEMT欧姆接触特性及表面形态的影响。采用传输线模型对各结构电极的比接触电阻率进行了测量,采用扫描电子显微镜对电极表面形态进行扫描。实验结果显示,在同样的退火条件下,随着Ti/Al层数的增加,比接触电阻率逐渐减小,表面形态趋于光滑;降低Ti/Al层的厚度会加剧Au向内扩散而增加比接触电阻率,但能稍微改善表面形态;Ti比例过高会影响Ti N的形成导致比接触电阻率增加,但能明显改善表面形态。
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| 关 键 词： | 高电子迁移率晶体管 欧姆接触 退火 比接触电阻率 |
| 收稿时间： | 2015-10-26 |
Effect of Multilayer Ti/Al Electrode Structure on AlGaN/GaN HEMT Ohmic Contact Characteristics |
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| YU Ning,WANG Hong-hang,LIU Fei-fei,DU Zhi-juan,WANG Yue-hua,SONG Hui-hui,ZHU Yan-xu,SUN Jie. Effect of Multilayer Ti/Al Electrode Structure on AlGaN/GaN HEMT Ohmic Contact Characteristics[J]. Chinese Journal of Luminescence, 2016, 37(2): 219-223. DOI: 10.3788/fgxb20163702.0219 |
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| Authors: | YU Ning WANG Hong-hang LIU Fei-fei DU Zhi-juan WANG Yue-hua SONG Hui-hui ZHU Yan-xu SUN Jie |
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| Affiliation: | 1. Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, China |
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| Abstract: | The effect of multilayer Ti/Al structure electrode on AlGaN/GaN HEMT Ohmic contact characteristics and the surface morphology were investigated. The specific contact resistance of all kinds of electrode structure was measured by transmission line model (TLM). The scanning electron microscope (SEM) was used to measure the electrode surface morphology. The experiment results show that the special contact resistance tend to decrease and the surface morphology tend to be smooth with the increasing of the number of Ti/Al layers in the same annealing conditions. The reducing of the thickness of Ti/Al layer can increase the specific contact resistance because of Au in-diffusion, but can slightly improve the surface morphology. High Ti ratio can reduce the formation of TiN, and lead to the increasing of specific contact resistance, but can greatly improve the surface morphology. |
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| Keywords: | high electron mobility transistor Ohmic contact annealing specific contact resistance |
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