Quantitative analysis of oxide films on ODS-alloys using MCs+-SIMS and e-beam SNMS

Summary Attempts to obtain a quantitative analysis of depth profiles of oxide films on iron-based ODS-alloys using MCs⁺-SIMS and e-beam SNMS are presented. Since the oxide films of the alloys consist mainly of alumina, implantation standards in Al₂O₃(sapphire) were used for the quantification of the measured depth profiles. The so-called matrix effect, normally present in SIMS analysis, is strongly reduced by recording the MCs⁺-secondary ions. Over a wide concentration range, agreement between SIMS and SNMS data is obtained within a factor 2–3. The evaluated concentration profiles for the main alloying elements in combination with ¹⁸O tracer-experiments have been used to give an interpretation of the growth processes of the oxide films for Fe-based ODS-alloys, with and without the addition of an yttria dispersion. The results show that the addition of yttria dispersion is responsible for the dramatic change observed in the oxide growth mechanism.ODS=Oxide Dispersion strengthenedThis poster was awarded the First Prize in Poster Session A by the Deutscher Arbeitskreis für Spektroskopie (DASp)