Excitation spectroscopy,Raman scattering and the temperature dependence of the luminescence in highly excited red HgI2 |
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| Authors: | G Kurtze C Klingshirn B Hönerlage E Tomzig H Scholz |
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| Institution: | Institut für angewandte Physik der Universität, D 7500 Karlsruhe, Fed. Rep. Germany;Laboratorie de Spectroscopie et d''Optique du Corps Solide, F 67000 Strassbourg, France;Institut für Werkstoffwissenschaften VI der Universität, D 8520 Erlangen, Fed. Rep. Germany;Philips Forschungslaboratorium, D 5100 Aachen, Fed. Rep. Germany |
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| Abstract: | The luminescence of red HgI2 is investigated as a function of temperature, excitation intensity and wavelength. At high excitation intensity and low temperature an “M-band” emission dominates. This M-band is assigned to biexciton decay and bound exciton scattering with acoustic phonons (“acoustic wing”), this assumption being supported by the results of excitation spectroscopy. The energy of the biexciton is determined to be (4661 ± 1) meV. From the evaluation of Raman spectra, the phonon energies (1.9, 3.1 and 14.0 ± 0.2) meV are found. At higher temperatures two lines are observed, one of which is ascribed to exciton-free carrier scattering. Position and line shape are in good agreement with theoretical results. The other emission line is found to be due to scattering involving excitons or carriers bound to lattice defects. |
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