Theoretical characterization of the SiC3H- anion |
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Authors: | Inostroza N Senent M L |
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Institution: | Departamento de Astrofísica Molecular e Infrarroja, Instituto de Estructura de la Materia, C.S.I.C., Serrano 121, Madrid 28006, Spain. n.inostroza@iem.cfmac.csic.es |
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Abstract: | Highly correlated ab initio methods are used to predict the equilibrium structures and spectroscopic parameters of the SiC(3)H(-) anion. The total energies and physical properties are reported using CASSCF/MRCI, RCCSD(T), and RCCSD(T)-F12 approaches and extended basis sets. The search of stable geometries leads to a total of 12 isomers (4 linear and 8 cyclic), for which electronic ground states have close-shell configurations. The stability of the linear form, l-SiC(3)H(-), is prominent. For the most stable linear isomer, the B(e) equilibrium rotational constant has been calculated with RCCSD(T) and a complete basis set. Core-correlation and vibrational effects have been taken into account to predict a B(0) of 2621.68 MHz for l-SiC(3)H(-) and 2460.48 MHz for l-SiC(3)D(-). The dipole moment of l-SiC(3)H(-) was found to be 2.9707 D with CASSCF/aug-cc-pV5Z and the electron affinity to be 2.7 eV with RCCSD(T)-F12A/aug-cc-pVTZ. Anharmonic spectroscopic parameters are derived from a quadratic, cubic, and quartic RCCSD(T)-F12A force field and second order perturbation theory. CASSCF/MRCI vertical excitations supply three metastable electronic states, (1)Σ(+) (3)Σ(+) and (3)Δ. Electron affinities calculated for a series of chains type SiC(n)H and SiC(n) (n=1-5) allow us to discuss the anion formation probabilities. |
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