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New Ceramics Precursors Containing Si and Ge Atoms—Cubic Germasilsesquioxanes—Synthesis,Thermal Decomposition and Spectroscopic Analysis
Authors:Aleksandra Skocze&#x;  Dawid Fr&#x;ckowiak  Robert E Przekop  Mi&#x;osz Frydrych  Ma&#x;gorzata Kasperkowiak  Piotr Jele&#x;  Maciej Sitarz  Bogdan Marciniec
Institution:1.Faculty of Chemistry, Adam Mickiewicz University in Poznań, Uniwersytetu Poznańskiego 8, 61-614 Poznań, Poland; (A.S.); (M.F.);2.Centre for Advanced Technologies, Adam Mickiewicz University in Poznań, Uniwersytetu Poznańskiego 10, 61-614 Poznań, Poland; (D.F.); or (R.E.P.); (M.K.);3.Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków, Poland; (P.J.); (M.S.)
Abstract:Compounds of the silsesquioxane type are attractive material precursors. High molecular weights and well-defined structures predestine them to create ceramics with a controlled composition at the molecular level. New molecular precursors of ceramic materials with the ratio of Si:Ge = 7:1 atoms were obtained. The influence of organic substituents on the thermal decomposition processes of germasilsesquioxanes was investigated. Some of the structures obtained are characterized by a high non-volatile residue after the thermal decomposition process. The introduction of the germanium atom to the structure of the silsesquioxane molecular cage reduces the thermal stability of the obtained structures.
Keywords:silsesquioxanes  germasilsesquioxanes  POSS  thermal analysis  decomposition  sublimation  ceramics precursors  FT-IR  Raman spectroscopy
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