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ChemInform Abstract: Growth Characteristics of CVD β-Silicon Carbide. |
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| Authors: | D. J. CHENG W. J. SHYY D. H. KUO M. H. HON |
| Abstract: | β-SiC films on graphite substrates are grown by low pressure CVD from MeSiCl3 vapor in flowing H2 and the microstructure of the resulting deposits is investigated by XRD, SEM, and TEM. |
| Keywords: | structure (solids and liquids) electric properties, superconductors, semiconductors silicon, Si carbon, C |