A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor |
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| Authors: | Ma Long Huang Ying-Long Zhang Yang Yang Fu-Hua and Wang Liang-Chen |
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| Institution: | Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | This paper reports that the structures of AlGaAs/InGaAs high electron mobility
transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially
grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An
Al0.24Ga0.76As chair barrier layer, which is grown adjacent to the top
AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current
ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT
is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and
fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits
self-latching property. |
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| Keywords: | resonant tunnelling diode (RTD) high electron mobility transistor (HEMT) molecular beam epitaxy (MBE) bistability self-latching |
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