| 薄膜生长及界面结构的计算机模拟 |
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| 引用本文： | 田民波,王英华,梁春富.薄膜生长及界面结构的计算机模拟[J].半导体学报,1988,9(6):586-595. |
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| 作者姓名： | 田民波 王英华 梁春富 |
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| 作者单位： | 清华大学工程物理系 北京
(田民波，王英华)，清华大学工程物理系 北京(梁春富) |
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| 摘 要： | 本文对薄膜沉积的形核、生长过程,对同质外延、异质外延生长过程中的某些现象进行了研究。特别是对界面势、界面畸变、界面缺陷以及气相、液相外延生长膜的最后形状等进行了计算机模拟研究,利用已有的实验结果与本工作进行了对比和验证。
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| 关 键 词： | 薄膜 计算机模拟 表面和界面 失配位错 外延生长 吸附、解吸和表面迁移 扩散 |
Computer Simulation of Thin Film Growth and Interface Structure |
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| Tian Minbo/.Computer Simulation of Thin Film Growth and Interface Structure[J].Chinese Journal of Semiconductors,1988,9(6):586-595. |
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| Authors: | Tian Minbo/ |
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| Institution: | Tian Minbo/Department of Engineering Physics,Tsinghua University,BeijingWang Yinhua/Department of Engineering Physics,Tsinghua University,BeijingLiang Chunfu/Department of Engineering Physics,Tsinghua University,Beijing |
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| Abstract: | Some of the processes involved in thin film nucleation and growth are discussed.Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated. Bymeans of computer simulation,the interface potential,the interface distort and the interfacedefect are specially emphasized.The surface morphology of vapor-deposited and LPE films isdemoastrated by computer simulation.The comparision and identify of this work with theexperimental results are also given. |
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| Keywords: | Thin film Computer simulation Surface and interface Misfit dislocation Epitaxial growth Adsorption Desorption and surface migration Diffusion |
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