AlInGaN 310 nm ultraviolet metal-insulator-semiconductor sensors with photo-chemical-vapor-deposition SiO2 cap layers |
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Authors: | Chin-Hsiang Chen |
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Affiliation: | (1) Department of Electronic Engineering, Cheng Shiu University, Kaohsiung, 830, Taiwan, R.O.C. |
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Abstract: | Al0.25In0.04Ga0.71N 310 nm near solar blind ultraviolet (UV) metal-insulator-semiconductor (MIS) sensors with different SiO2 cap layer thickness were successfully fabricated. With appropriate SiO2 layer thickness, the dark current of AlInGaN sensors was notably suppressed from 1.88 × 10−6 to 1.91 × 10−9 A, and the photo-generated carriers still could reach the electrodes by tunneling through the thin SiO2 layer under the illumination. It could be clearly seen that cut-off occurred at around 300/310 nm while the responses above the bandgap were flat. |
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Keywords: | AlGaN MIS sensor ultraviolet |
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